60N60 Datasheet
Overview
The 60N60 is a high-power, N-channel, enhancement-mode power MOSFET transistor designed for high-frequency switching applications. It is part of the STP60N60 series from STMicroelectronics, a leading manufacturer of semiconductor products.
Features
Key Features
- High Power Rating: The 60N60 has a high power rating of 60A continuous drain current and 600V drain-source voltage, making it suitable for high-power switching applications.
- Low On-Resistance: The device has a low on-resistance of 40mΩ, which reduces power losses and increases efficiency.
- Fast Switching: The 60N60 has a fast switching time of 10ns, making it suitable for high-frequency applications.
Other Features
- Enhancement-Mode: The device is designed to operate in enhancement-mode, which means it can be turned on by applying a positive gate-source voltage.
- N-Channel: The 60N60 is an N-channel device, which means the current flows from the drain to the source when the gate is turned on.
- TO-220 Package: The device is available in a TO-220 package, which provides good thermal dissipation and ease of use.
Electrical Characteristics
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | ID | 60 | A |
| Pulsed Drain Current | IDM | 120 | A |
| Operating Temperature | Tj | -55 to 150 | °C |
| Storage Temperature | Tstg | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction-to-Case Thermal Resistance | RthJC | 1.2 | °C/W |
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | °C/W |
Electrical Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| On-Resistance | RDS(on) | 40 | mΩ |
| Gate Threshold Voltage | VGS(th) | 3 | V |
| Drain-Source Leakage Current | IDSS | 1 | mA |
Applications
The 60N60 is suitable for a wide range of high-power switching applications, including:
- DC-DC Converters: The device is suitable for use in DC-DC converters, where high-power switching is required.
- Motor Control: The 60N60 can be used in motor control applications, where high-power switching is required to control motor speed and direction.
- Power Supplies: The device is suitable for use in power supplies, where high-power switching is required to regulate output voltage.
Conclusion
The 60N60 is a high-power, N-channel, enhancement-mode power MOSFET transistor designed for high-frequency switching applications. Its high power rating, low on-resistance, and fast switching time make it suitable for a wide range of high-power switching applications.
