11n60c3 Mosfet Datasheet

3 min read Jun 25, 2024
11n60c3 Mosfet Datasheet

11N60C3 MOSFET Datasheet: Understanding the Specifications and Applications

The 11N60C3 is a type of N-channel enhancement mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by various companies such as STMicroelectronics, Fairchild Semiconductor, and others. This datasheet review aims to provide an overview of the 11N60C3 MOSFET's specifications, features, and applications.

Key Specifications

** Electrical Characteristics **

  • VDS (Drain-Source Voltage): 600V
  • VGS (Gate-Source Voltage): ±20V
  • ID (Continuous Drain Current): 11A
  • RDS(on) (On-State Resistance): 0.65Ω (typical)
  • Qg (Total Gate Charge): 63nC (typical)

** Thermal Characteristics **

  • TJ (Junction Temperature): -55°C to 150°C
  • PD (Power Dissipation): 110W (typical)

** Package and Pinout **

  • Package: TO-220AB
  • Pinout: Drain (D), Gate (G), and Source (S)

Features and Benefits

High Voltage and Current Handling

The 11N60C3 MOSFET is designed to handle high voltage and current, making it suitable for power switching applications.

Low On-State Resistance

The low RDS(on) of 0.65Ω ensures minimal power loss and heat generation, increasing the overall efficiency of the system.

Fast Switching

The 11N60C3 MOSFET has a fast switching speed, making it suitable for high-frequency applications.

Applications

Power Supplies

The 11N60C3 MOSFET is commonly used in power supply circuits, such as DC-DC converters, voltage regulators, and motor control systems.

Motor Control

Its high current handling capability makes it suitable for motor control applications, such as motor drivers, servo controllers, and robotics.

Audio Equipment

The 11N60C3 MOSFET is also used in audio equipment, such as amplifiers, audio filters, and audio signal processing systems.

Conclusion

The 11N60C3 MOSFET is a versatile power switching device suitable for various applications that require high voltage and current handling. Its low on-state resistance, fast switching speed, and high junction temperature rating make it an ideal choice for designers and engineers. By understanding the specifications and features of this MOSFET, designers can optimize their system's performance and efficiency.

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