11N60 Datasheet: Understanding the Characteristics of This Power MOSFET
Introduction
The 11N60 is a popular power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in various electronic applications. It is manufactured by several companies, including STMicroelectronics, Infineon, and On Semiconductor. In this article, we will delve into the characteristics and features of the 11N60 power MOSFET, as outlined in its datasheet.
Overview of the 11N60 Power MOSFET
The 11N60 is an N-channel enhancement mode power MOSFET, designed for high-power switching applications. It has a drain-source voltage rating of 600V, a gate-source voltage rating of ±20V, and a continuous drain current rating of 11A.
Key Features and Characteristics
The 11N60 power MOSFET has several key features and characteristics that make it suitable for various applications:
- Low On-State Resistance (RDS(on)): The 11N60 has a low RDS(on) of 0.45Ω, which reduces power losses and increases efficiency.
- High Voltage Rating: The device can handle high drain-source voltages, making it suitable for applications such as power supplies, motor control, and lighting systems.
- Low Input Capacitance: The 11N60 has a low input capacitance of 150pF, which reduces the input impedance and makes it easier to drive.
- Fast Switching Times: The device has a fast turn-on time of 10ns and a fast turn-off time of 30ns, making it suitable for high-frequency switching applications.
- High Current Rating: The 11N60 has a high continuous drain current rating of 11A, making it suitable for applications that require high current handling.
Electrical Characteristics
The electrical characteristics of the 11N60 power MOSFET are as follows:
- Drain-Source Breakdown Voltage (V(BR)DSS): 600V
- Gate-Source Threshold Voltage (VGS(th)): 2V to 4V
- Continuous Drain Current (ID): 11A
- Pulse Drain Current (IDM): 33A
- On-State Resistance (RDS(on)): 0.45Ω
- Input Capacitance (Ciss): 150pF
- Output Capacitance (Coss): 15pF
- Reverse Transfer Capacitance (Crss): 5pF
Applications
The 11N60 power MOSFET is suitable for a wide range of applications, including:
- Power Supplies: The device can be used in power supplies for voltage regulation, rectification, and switching applications.
- Motor Control: The 11N60 can be used to control motor speed and direction in applications such as industrial drives and HVAC systems.
- Lighting Systems: The device can be used in lighting systems for switching and dimming applications.
- Audio Equipment: The 11N60 can be used in audio equipment for power amplification and switching applications.
Conclusion
In conclusion, the 11N60 power MOSFET is a high-performance device suitable for a wide range of applications. Its low on-state resistance, high voltage rating, and fast switching times make it an ideal choice for designers. By understanding the characteristics and features of the 11N60, as outlined in its datasheet, designers can realize the full potential of this device in their designs.
