11N60C3 MOSFET Datasheet PDF: Understanding the Specifications and Applications
The 11N60C3 is a popular power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power switching applications. This article provides an overview of the 11N60C3 MOSFET datasheet PDF, highlighting its key specifications, features, and applications.
Overview
The 11N60C3 is a N-channel enhancement-mode power MOSFET manufactured by STMicroelectronics. It is designed to operate at high frequencies and is suitable for a wide range of applications, including power supplies, motor control, and switching circuits.
Key Specifications
** Electrical Characteristics **
- V(DSS): 600V (Drain-Source Voltage)
- I(D): 11A (Continuous Drain Current)
- R(DS(on)): 0.45Ω (On-State Resistance)
- Q(g): 44nC (Total Gate Charge)
Thermal Characteristics
- T(J): 150°C (Junction Temperature)
- R(θJA): 62°C/W (Junction-to-Ambient Thermal Resistance)
Package
- TO-220AB (Through-hole package)
Features
- High voltage and current ratings
- Low on-state resistance (R(DS(on)))
- Fast switching speed
- Low gate charge (Q(g))
- Avalanche energy rated
Applications
- Power supplies (DC-DC converters, AC-DC converters)
- Motor control (motor drives, servo drives)
- Switching circuits (relays, contactors)
- Audio equipment (amplifiers, speakers)
- Industrial control (PLCs, HMIs)
Datasheet PDF
The 11N60C3 MOSFET datasheet PDF can be downloaded from the STMicroelectronics website. The datasheet provides detailed information on the device's electrical characteristics, thermal characteristics, package information, and application notes.
Conclusion
The 11N60C3 MOSFET is a versatile power device suitable for a wide range of high-power switching applications. By understanding the key specifications and features of this device, designers can optimize their designs for improved performance, reliability, and efficiency. Always consult the datasheet PDF for detailed information and application guidelines.
