13N65 Datasheet: Understanding the Characteristics of this Power MOSFET
Overview
The 13N65 is a power MOSFET designed for high-power applications, offering high current density and low on-state resistance. This datasheet provides an overview of the 13N65's key characteristics, features, and applications.
Key Features
- High Voltage Rating: The 13N65 has a high voltage rating of 650V, making it suitable for high-voltage applications.
- Low On-State Resistance: The MOSFET has a low on-state resistance (Rds(on)) of 0.45Ω, reducing power losses and heat generation.
- High Current Rating: The 13N65 can handle high currents up to 13A, making it ideal for high-power applications.
- Fast Switching: The MOSFET has a fast switching time, allowing for high-frequency operation.
Electrical Characteristics
- Gate-to-Source Voltage (Vgs): ±20V
- Drain-to-Source Voltage (Vds): 650V
- Gate-to-Drain Voltage (Vgd): ±20V
- Continuous Drain Current (Id): 13A
- Pulse Drain Current (Idm): 39A
- On-State Resistance (Rds(on)): 0.45Ω
- Total Gate Charge (Qg): 33nC
Applications
The 13N65 is suitable for a wide range of high-power applications, including:
- Power Supplies: The MOSFET's high voltage rating and low on-state resistance make it ideal for power supply applications.
- Motor Control: The 13N65 can be used to control high-power motors in applications such as industrial automation and robotics.
- High-Frequency Switching: The MOSFET's fast switching time and low on-state resistance make it suitable for high-frequency switching applications.
Package and Pinout
The 13N65 is available in a TO-220 package with a standard pinout:
- Drain (D): Pin 1
- Gate (G): Pin 2
- Source (S): Pin 3
Conclusion
The 13N65 power MOSFET is a high-performance device suitable for a wide range of high-power applications. Its high voltage rating, low on-state resistance, and fast switching time make it an ideal choice for designers looking to improve efficiency and reduce power losses in their designs.
