13n60

3 min read Jun 28, 2024
13n60

13N60: A High-Performance Power MOSFET

Overview

The 13N60 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power applications. It is a type of N-channel enhancement mode power MOSFET, which means it is suitable for use in a wide range of applications, including switching power supplies, motor control, and high-frequency power electronics.

Features

The 13N60 power MOSFET is designed to provide high performance and reliability in demanding applications. Some of its key features include:

  • High Current Rating: The 13N60 has a high current rating of 13A, making it suitable for use in high-power applications.
  • Low On-State Resistance: The MOSFET has a low on-state resistance of 0.45 ohms, which reduces power losses and increases efficiency.
  • Fast Switching: The 13N60 has a fast switching speed, making it suitable for high-frequency applications.
  • High Voltage Rating: The MOSFET has a high voltage rating of 600V, making it suitable for use in high-voltage applications.

Applications

The 13N60 power MOSFET is suitable for use in a wide range of applications, including:

  • Switching Power Supplies: The 13N60 can be used in switching power supplies, such as DC-DC converters and AC-DC converters.
  • Motor Control: The MOSFET can be used in motor control applications, such as motor drives and servo controllers.
  • High-Frequency Power Electronics: The 13N60 can be used in high-frequency power electronics applications, such as radio frequency (RF) power amplifiers and microwave ovens.

Characteristics

Here are some of the key characteristics of the 13N60 power MOSFET:

  • Drain-Source Voltage (Vds): 600V
  • Gate-Source Voltage (Vgs): ±20V
  • Drain Current (Id): 13A
  • On-State Resistance (Rds(on)): 0.45 ohms
  • Switching Time (tr): 15ns
  • Operating Temperature (Tj): -55°C to 150°C

Conclusion

The 13N60 power MOSFET is a high-performance device that is suitable for use in a wide range of applications. Its high current rating, low on-state resistance, and fast switching speed make it an ideal choice for designers who need a reliable and efficient power MOSFET.

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