11N80C3 Datasheet: Understanding the Characteristics of this Power MOSFET
Overview
The 11N80C3 is a power MOSFET designed for high-power applications, offering high switching speeds and low on-resistance. This device is commonly used in power supplies, DC-DC converters, and motor control circuits. In this article, we will delve into the key characteristics and features of the 11N80C3 power MOSFET, as outlined in its datasheet.
Key Features
Voltage Rating
The 11N80C3 has a maximum drain-source voltage (Vds) rating of 800V, making it suitable for high-voltage applications.
Current Rating
The device has a maximum drain current (Id) rating of 11A, allowing it to handle moderate to high current loads.
On-Resistance
The 11N80C3 has a low on-resistance (Rds(on)) of 280mΩ, which minimizes power losses and heat generation.
Switching Speed
This power MOSFET has a fast switching speed, with a rise time (tr) of 12ns and a fall time (tf) of 20ns.
Gate Threshold Voltage
The gate threshold voltage (Vgs(th)) is 4V, which is relatively low, making it easy to drive the device.
Electrical Characteristics
Breakdown Voltage
The breakdown voltage (BVdss) of the 11N80C3 is 900V, ensuring safe operation even under fault conditions.
** Drain-Source Leakage Current**
The drain-source leakage current (Idss) is 100μA, which is relatively low, minimizing standby power losses.
Gate-Source Leakage Current
The gate-source leakage current (Igss) is 100nA, which is very low, reducing the risk of unwanted turn-on.
Thermal Characteristics
Junction Temperature
The maximum junction temperature (Tj) of the 11N80C3 is 150°C, which is relatively high, allowing for reliable operation in demanding environments.
Thermal Resistance
The thermal resistance (Rth{j-a}) is 2.5°C/W, which is moderate, making it essential to provide adequate heat sinking.
Packaging and Pinout
The 11N80C3 is available in a TO-220 package, with a three-pin configuration: drain (D), gate (G), and source (S).
Applications
The 11N80C3 power MOSFET is suitable for a wide range of high-power applications, including:
- Power Supplies: DC-DC converters, switching power supplies, and high-voltage power supplies.
- Motor Control: Motor drives, servo control, and high-power motor control applications.
- Industrial Power: Industrial power supplies, high-voltage power conditioning, and power factor correction.
In conclusion, the 11N80C3 power MOSFET is a high-performance device designed for demanding high-power applications. Its low on-resistance, fast switching speed, and high voltage rating make it an ideal choice for designers looking to optimize their power circuits. By understanding the key characteristics and features outlined in this datasheet, designers can ensure reliable and efficient operation in their applications.
