11N80C3: Understanding the 800V, 11mΩ, N-Channel Power MOSFET
The 11N80C3 is a high-voltage, low-resistance N-Channel Power MOSFET designed for high-power switching applications. Manufactured by STMicroelectronics, this device is part of the MDmesh technology family, known for its high performance and ruggedness.
Key Features
800V Drain-Source Voltage
The 11N80C3 has a maximum drain-source voltage rating of 800V, making it suitable for high-voltage applications such as power supplies, motor control, and lighting systems.
11mΩ On-Resistance
The device features a low on-resistance of 11mΩ, which reduces conduction losses and increases overall system efficiency.
High-Current Capability
The 11N80C3 can handle high currents up to 11A, making it suitable for high-power applications.
Fast Switching
With a rise time of 15ns and a fall time of 20ns, the 11N80C3 can switch quickly, reducing switching losses and electromagnetic interference (EMI).
Ruggedness
The device is designed to withstand rugged operating conditions, including high temperatures up to 150°C, making it suitable for automotive and industrial applications.
Applications
Power Supplies
The 11N80C3 is suitable for high-voltage power supplies, including AC-DC converters and DC-DC converters.
Motor Control
The device can be used in motor control applications, such as motor drivers and servo controllers.
Lighting Systems
The 11N80C3 can be used in lighting systems, including fluorescent lighting and LED lighting.
Industrial Automation
The device is suitable for industrial automation applications, including robotics and process control.
Conclusion
The 11N80C3 is a high-performance, low-resistance N-Channel Power MOSFET suitable for high-power switching applications. Its high voltage rating, low on-resistance, and high-current capability make it an ideal choice for power supplies, motor control, lighting systems, and industrial automation applications.
