12N60NZ Datasheet: A Comprehensive Guide
The 12N60NZ is a popular N-channel enhancement mode power MOSFET transistor designed for high-speed switching applications. In this article, we will delve into the datasheet of the 12N60NZ, exploring its features, specifications, and applications.
Overview
The 12N60NZ is a 600V, 12A, N-channel power MOSFET transistor designed for high-speed switching applications such as power supplies, motor control, and LED lighting. It features a low on-state resistance (Rds(on)) of 0.45Ω, making it ideal for high-frequency switching applications.
Datasheet Parameters
Electrical Characteristics
- VDS (Drain-Source Voltage): 600V
- ID (Continuous Drain Current): 12A
- Rds(on) (On-State Resistance): 0.45Ω
- VGS(th) (Threshold Voltage): 2.0-4.0V
- IGSS (Gate-Body Leakage Current): 100nA
Thermal Characteristics
- PD (Power Dissipation): 120W
- TJ (Junction Temperature): -55°C to 150°C
- RthJA (Junction-to-Ambient Thermal Resistance): 25°C/W
Switching Characteristics
- tr (Rise Time): 20ns
- tf (Fall Time): 20ns
- td (Turn-On Delay Time): 10ns
- td(off) (Turn-Off Delay Time): 20ns
Applications
The 12N60NZ is suitable for a wide range of applications, including:
- Power Supplies: The 12N60NZ's low on-state resistance and fast switching times make it an ideal choice for power supply applications.
- Motor Control: The 12N60NZ's high current handling capability and fast switching times make it suitable for motor control applications.
- LED Lighting: The 12N60NZ's low power consumption and fast switching times make it an ideal choice for LED lighting applications.
Conclusion
In conclusion, the 12N60NZ is a high-performance N-channel power MOSFET transistor suitable for high-speed switching applications. Its low on-state resistance, fast switching times, and high current handling capability make it an ideal choice for a wide range of applications. By referring to the datasheet, designers can easily determine the suitability of the 12N60NZ for their specific application.
