12N50E Equivalent: A Comprehensive Guide
The 12N50E is a popular power MOSFET widely used in various electronic circuits, particularly in switching applications. However, there may be situations where a replacement or equivalent component is needed. In this article, we will explore the 12N50E equivalent components and their characteristics.
What is the 12N50E?
The 12N50E is a type of N-channel enhancement-mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for high-power switching applications, such as in motor control, power supplies, and DC-DC converters. The 12N50E has a drain-source breakdown voltage of 500V, a drain current of 12A, and a gate-source threshold voltage of 2-4V.
12N50E Equivalent Components
Here are some equivalent components to the 12N50E:
1. IRF540N (International Rectifier)
The IRF540N is a N-channel power MOSFET with a drain-source breakdown voltage of 100V, a drain current of 33A, and a gate-source threshold voltage of 2-4V. It has a similar pinout and package type as the 12N50E.
2. STP12NF50 (STMicroelectronics)
The STP12NF50 is another N-channel power MOSFET from STMicroelectronics, with a drain-source breakdown voltage of 500V, a drain current of 12A, and a gate-source threshold voltage of 2-4V. It has the same pinout and package type as the 12N50E.
3. FQP12N50 (Fairchild Semiconductor)
The FQP12N50 is a N-channel power MOSFET with a drain-source breakdown voltage of 500V, a drain current of 12A, and a gate-source threshold voltage of 2-4V. It has a similar pinout and package type as the 12N50E.
4. BUZ12N50 (NXP Semiconductors)
The BUZ12N50 is a N-channel power MOSFET with a drain-source breakdown voltage of 500V, a drain current of 12A, and a gate-source threshold voltage of 2-4V. It has a similar pinout and package type as the 12N50E.
Characteristics Comparison
Here's a comparison of the characteristics of the 12N50E and its equivalent components:
| Parameter | 12N50E | IRF540N | STP12NF50 | FQP12N50 | BUZ12N50 |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (V) | 500 | 100 | 500 | 500 | 500 |
| Drain Current (A) | 12 | 33 | 12 | 12 | 12 |
| Gate-Source Threshold Voltage (V) | 2-4 | 2-4 | 2-4 | 2-4 | 2-4 |
| Package Type | TO-220 | TO-220 | TO-220 | TO-220 | TO-220 |
Conclusion
In conclusion, the 12N50E equivalent components listed above offer similar characteristics and can be used as replacements in various electronic circuits. However, it's essential to verify the specifications and pinout of the replacement component to ensure compatibility with the original design.
