12N50E Datasheet: Understanding the Features and Characteristics of this Power MOSFET
The 12N50E is a popular power MOSFET transistor widely used in various electronic applications. It is a N-channel enhancement mode MOSFET, suitable for high-power switching applications. In this article, we will delve into the 12N50E datasheet and explore its features, characteristics, and applications.
Features and Characteristics
Maximum Ratings
- Drain-Source Voltage (Vds): 500 V
- Gate-Source Voltage (Vgs): ±20 V
- Continuous Drain Current (Id): 12 A
- Pulsed Drain Current (Idm): 36 A
- Power Dissipation (Pd): 125 W
Electrical Characteristics
- Threshold Voltage (Vgs(th)): 2-4 V
- Drain-Source On-State Resistance (Rds(on)): 0.25 Ω
- Gate-Source Capacitance (Cgs): 1200 pF
- Gate-Drain Capacitance (Cgd): 200 pF
- Input Capacitance (Ciss): 2000 pF
Switching Characteristics
- Turn-On Time (tr): 10 ns
- Turn-Off Time (tf): 20 ns
- Rise Time (trr): 10 ns
- Fall Time (tf): 20 ns
Package and Thermal Characteristics
- Package Type: TO-220AB
- Thermal Resistance (Rth(j-a)): 2.5°C/W
- Operating Temperature Range (TJ): -55°C to 150°C
Applications
The 12N50E power MOSFET is suitable for a wide range of applications, including:
- Power supplies: The 12N50E can be used in power supply circuits as a switching device.
- Motor control: It can be used to control the speed of DC motors.
- Audio amplifiers: The 12N50E can be used in audio amplifier circuits to improve efficiency and reduce distortion.
- Switch-mode power supplies: It can be used in switch-mode power supplies to improve efficiency and reduce heat generation.
Conclusion
The 12N50E datasheet provides a comprehensive overview of the features and characteristics of this power MOSFET transistor. Its high current rating, low on-state resistance, and fast switching times make it an ideal choice for high-power switching applications. By understanding the characteristics and features of the 12N50E, designers and engineers can use this component to create efficient and reliable electronic circuits.