11N65M5 Datasheet: Overview and Specifications
The 11N65M5 is a high-power, high-voltage MOSFET designed for high-frequency switching applications. This datasheet provides an overview of the device's features, specifications, and application guidelines.
Device Overview
The 11N65M5 is a N-Channel enhancement mode power MOSFET with a voltage rating of 650V and a current rating of 11A. The device is designed to provide high power density, low gate charge, and fast switching speeds, making it suitable for a wide range of applications, including:
- DC-DC converters
- Power supplies
- Motor control
- Industrial power systems
Key Features
- High voltage rating: 650V
- High current rating: 11A
- Low gate charge: 45nC
- Fast switching speed: 15ns
- Low RDS(on): 0.65ohm
- High power density: 11A/650V
Pin Configuration
The 11N65M5 is available in a TO-220 package with the following pin configuration:
- Drain (D): Pin 1
- Gate (G): Pin 2
- Source (S): Pin 3
Absolute Maximum Ratings
- Drain-Source voltage (Vds): 650V
- Gate-Source voltage (Vgs): ±20V
- Continuous drain current (Id): 11A
- Pulse drain current (Idm): 22A
- Operating temperature (Tj): -55°C to 150°C
Electrical Characteristics
- Threshold voltage (Vth): 2.0V
- Gate-source leakage current (Igs): ±100nA
- Drain-source on-state resistance (RDS(on)): 0.65ohm
- Total gate charge (Qg): 45nC
- Input capacitance (Ciss): 2200pF
- Output capacitance (Coss): 330pF
- Reverse transfer capacitance (Crss): 150pF
Applications
The 11N65M5 is suitable for a wide range of applications, including:
- DC-DC converters
- Power supplies
- Motor control
- Industrial power systems
- LED lighting
- Solar power systems
Conclusion
The 11N65M5 is a high-performance, high-power MOSFET designed for high-frequency switching applications. Its high voltage rating, high current rating, and fast switching speed make it an ideal choice for a wide range of applications. The device is available in a TO-220 package and is RoHS compliant. For more information, please refer to the manufacturer's datasheet.
