10NM60N MOSFET Datasheet: A Comprehensive Overview
The 10NM60N is a highly popular MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in various electronic applications. This article provides an in-depth review of the 10NM60N MOSFET datasheet, highlighting its key features, specifications, and applications.
Overview
The 10NM60N is an N-channel enhancement mode MOSFET designed for high-speed switching applications. It is a low-voltage, high-current device with a drain-source voltage rating of 60V and a continuous drain current rating of 10A.
Key Features
- Low RDS(on): The 10NM60N has a low on-state resistance (RDS(on)) of 20mΩ, making it suitable for high-frequency switching applications.
- High-Speed Switching: The device is optimized for high-speed switching with a turn-on time (tr) of 15ns and a turn-off time (tf) of 30ns.
- Low Gate Threshold: The gate-source threshold voltage (VGS(th)) is 2.5V, allowing for easy gate drive.
- High Gate-Source Breakdown: The gate-source breakdown voltage (BVGS) is 20V, providing a high margin of safety against gate-source overvoltage.
Electrical Characteristics
- Drain-Source Voltage (VDS): 60V
- Drain Current (ID): 10A
- Gate-Source Voltage (VGS): ±20V
- On-State Resistance (RDS(on)): 20mΩ
- Turn-On Time (tr): 15ns
- Turn-Off Time (tf): 30ns
- Gate-Source Threshold Voltage (VGS(th)): 2.5V
- Gate-Source Breakdown Voltage (BVGS): 20V
Applications
The 10NM60N is suitable for a wide range of applications, including:
- Switch Mode Power Supplies: The device's low RDS(on) and high-speed switching capabilities make it ideal for switch mode power supplies.
- Motor Control: The 10NM60N's high current rating and low RDS(on) make it suitable for motor control applications.
- Audio Amplifiers: The device's low RDS(on) and high-speed switching capabilities make it suitable for audio amplifier applications.
Package and Dimensions
The 10NM60N is available in a TO-220 package with the following dimensions:
- Length: 10.28mm
- Width: 6.35mm
- Height: 4.57mm
Conclusion
The 10NM60N MOSFET is a highly versatile device suitable for a wide range of applications. Its low RDS(on), high-speed switching capabilities, and high current rating make it an ideal choice for designers. By considering the key features, specifications, and applications discussed in this article, designers can make informed decisions when selecting a MOSFET for their next project.
