10NM60N Datasheet PDF: Understanding the Characteristics of this Power MOSFET
The 10NM60N is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor, a leading manufacturer of semiconductor components. This datasheet PDF provides a comprehensive overview of the 10NM60N's characteristics, features, and applications.
Overview
The 10NM60N is a N-channel power MOSFET designed for high-power switching applications. It features a low on-resistance (Rds(on)) of 10mΩ, making it suitable for high-frequency switching operations. The device is available in a TO-220 package and has a maximum drain current rating of 60A.
Features
Key Features:
- Low On-Resistance (Rds(on)): 10mΩ typical at Vgs = 10V
- High Drain Current Rating: 60A continuous, 120A pulsed
- High-Speed Switching: Suitable for high-frequency switching applications
- Low Gate Charge: Qg = 120nC typical
- RoHS Compliant
Electrical Characteristics:
- Drain-Source Voltage (Vds): 60V
- Gate-Source Voltage (Vgs): ±20V
- Continuous Drain Current (Id): 60A
- Pulsed Drain Current (Idm): 120A
- On-Resistance (Rds(on)): 10mΩ typical at Vgs = 10V
- Gate Threshold Voltage (Vth): 2.0V typical
Applications
The 10NM60N is suitable for a wide range of high-power switching applications, including:
- DC-DC Converters
- Motor Control
- Power Supply
- Audio Amplifiers
- Lighting Systems
Datasheet PDF
The 10NM60N datasheet PDF provides detailed information on the device's electrical characteristics, packaging, and thermal performance. It also includes guidelines for PCB layout, thermal management, and reliability.
Conclusion
The 10NM60N power MOSFET from ON Semiconductor is a high-performance device suitable for demanding high-power switching applications. With its low on-resistance, high drain current rating, and high-speed switching capabilities, it is an ideal choice for designers seeking to optimize their power systems.
To learn more about the 10NM60N and access the datasheet PDF, visit the ON Semiconductor website.
