10n65c Mosfet Datasheet

4 min read Jun 24, 2024
10n65c Mosfet Datasheet

10N65C MOSFET Datasheet: A Comprehensive Guide

The 10N65C is a popular N-channel enhancement mode Field-Effect Transistor (FET) designed for high-power switching applications. In this article, we will delve into the details of the 10N65C MOSFET datasheet, exploring its key features, specifications, and applications.

Overview

The 10N65C is a high-voltage, high-current MOSFET with a drain-source voltage rating of 650V and a drain current rating of 10A. It is optimized for high-frequency switching applications, making it an ideal choice for power supplies, motor control, and high-power audio amplifiers.

Key Features

High-Voltage Rating

The 10N65C has a high drain-source voltage rating of 650V, making it suitable for high-voltage applications.

High-Current Capability

With a drain current rating of 10A, the 10N65C can handle high-current applications with ease.

Low On-Resistance

The 10N65C has a low on-resistance of 0.65 Ohms, resulting in reduced power losses and increased efficiency.

Fast Switching Times

The 10N65C has fast switching times, making it suitable for high-frequency applications.

High-Temperature Operation

The 10N65C can operate at high temperatures up to 150°C, making it suitable for demanding applications.

Electrical Characteristics

Static Characteristics

  • Drain-Source Voltage (Vds): 650V
  • Gate-Source Voltage (Vgs): ±20V
  • Drain Current (Id): 10A
  • On-Resistance (Rds(on)): 0.65 Ohms

Dynamic Characteristics

  • Rise Time (tr): 20 ns
  • Fall Time (tf): 15 ns
  • Input Capacitance (Ci): 1000 pF
  • Output Capacitance (Co): 200 pF

Applications

The 10N65C is suitable for a wide range of high-power switching applications, including:

  • Power Supplies
  • Motor Control
  • High-Power Audio Amplifiers
  • DC-DC Converters
  • Inverters

Package and Pinout

The 10N65C is available in a TO-220AB package with a pinout as follows:

  • Drain (D): Pin 1
  • Gate (G): Pin 2
  • Source (S): Pin 3

Conclusion

In conclusion, the 10N65C MOSFET is a high-performance device designed for high-power switching applications. Its high-voltage rating, high-current capability, and low on-resistance make it an ideal choice for demanding applications. By understanding the electrical characteristics and features of the 10N65C, designers can optimize their designs for maximum efficiency and reliability.

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